A hole accelerator for InGaN/GaN light-emitting diodes

作者：Zhang Zi Hui^*; Liu Wei; Tan Swee Tiam; Ji Yun; Wang Liancheng; Zhu Binbin; Zhang Yiping; Lu Shunpeng; Zhang Xueliang; Hasanov Namig; Sun Xiao Wei; Demir Hilmi Volkan

来源：Applied Physics Letters, 2014, 105(15): 153503.

DOI：10.1063/1.4898588

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

• 出版日期2014-10-13
• 单位南阳理工学院