科研之友
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摘要
Semiconductor quantum dots (QDs) have attracted extensive attention in various applications because of their unique optical and electronic properties. However, long-term photostability remains a challenge for their practical application. Here, we present a simple method to enhance the photostability of QDs against oxidation by doping aluminum into the shell of core/shell QDs. We demonstrate that Al in the coating shell can be oxidized to Al2O3, which can serve as a self-passivation layer on the surface of the core/shell QDs and effectively stop further photodegradation during long-term light irradiation. The prepared CdSe/CdS:Al QDs survived 24 h without significant degradation when they were subjected to intense illumination under LED light (450 rim, 0.35 W/cm(2)), whereas conventional CdSe/CdS QDs were bleached within 3 h.
- 出版日期2015-10-7
- 单位上海交通大学
