Advanced monolithic pixel sensors using SOI technology

作者：Miyoshi Toshinobu^*; Arai Yasuo; Asano Mari; Fujita Yowichi; Hamasaki Ryutaro; Hara Kazuhiko; Honda Shunsuke; Ikegami Yoichi; Kurachi Ikuo; Mitsui Shingo; Nishimura Ryutaro; Tauchi Kazuya; Tobita Naoshi; Tsuboyama Toru; Yamada Miho

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2016, 824: 439-442.

DOI：10.1016/j.nima.2015.11.109

• SOI
• CMOS
• Pixel sensor
• Solid state detector

We are developing advanced pixel sensors using silicon-on-insulator (SOl) technology. A SOl wafer is used; top silicon is used for electric circuit and bottom silicon is used as a sensor. Target applications are high-energy physics, X-ray astronomy, material science, non-destructive inspection, medical application and so on. We have developed two integration-type pixel sensors, FPIXb and INTPIX7. These sensors were processed on single SOI wafers with various substrates in n- or p-type and double SOI wafers. The development status of double SOI sensors and some up-to-date test results of n-type and p-type SOI sensors are shown.

• 出版日期2016-7-11