A novel symmetric GaN MESFET by dual extra layers of Si3N4

作者：Ramezani Zeinab; Orouji Ali A^*; Aminbeidokhti Amirhossein

来源：Physica E: Low-Dimensional Systems and Nanostructures , 2015, 70: 135-140.

DOI：10.1016/j.physe.2015.02.025

• GaN
• MESFET
• Maximum output power density
• RF parameters

In this paper, a novel GaN MESFET structure with Double Extra Layers of Si3N4 (DEL-MESFET) under gate edges has been introduced in order to modify the carrier concentration and the electric field in the channel. The results show that the breakdown voltage (V-BR) increases to 200 V in the proposed structure from 119.2 V in a conventional MESFET structure (C-MESFET). Furthermore, the maximum output power density (P-max) of the proposed structure is 74% higher than that of the conventional one. By modifying the carrier's concentration, the gate-source and gate-drain capacitances decrease that lead to the improvement of the RF characteristics including f(t) and f(max) from 27.5 and 99 GHz of the C-SOI MESFET to 30 and 105 GHz of the DEL-MESFET, respectively. Therefore, the results show that the proposed structure provides the excellent performance compared with the C-MESFET structure and can be taken into consideration for the future of the VLSI applications.

• 出版日期2015-6