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摘要
Based on Grove theory, a kinetic model for MOCVD deposition of AlN film was proposed and built in this paper. Physical and chemical processes, e.g., gas phase transport, surface adsorption, surface chemical reactions, as well as the gas phase reactions in boundary layer were analyzed in the kinetic model. Based on this model, the effects of substrate temperature and chamber pressure on the growth rate of AlN film were investigated, as well as the corresponding mechanisms. Meanwhile, the dependences of AlN growth rate and temperature, pressure for three types of reaction pathways were also analyzed. The simulated results provide an important insight into the optimizing of AlN growth with appropriate temperature and pressure in experiment.
- 出版日期2017-11-15
- 单位西安电子科技大学
