Misfit dislocations in nanowire heterostructures

作者：Kavanagh Karen L^*

来源：Semiconductor Science and Technology, 2010, 25(2): 024006.

DOI：10.1088/0268-1242/25/2/024006

The development of strain relaxation in lattice-mismatched semiconductor nanowire heterostructures is reviewed. Theoretical predictions for critical geometries for axial and core-shell structures are summarized and compared to experimental reports. All agree that nanowires can accommodate a greater elastic strain than is commonly seen with planar interfaces. Large mismatch as high as 10% has been elastically accommodated consistent with theoretical predictions. Elastically strained nanowire examples predominate, likely since nucleation is otherwise inhibited. A (maximum) critical radius is observed for epitaxial growth directly onto lattice-mismatched substrates. The few examples where strain relaxation via dislocations or roughening has been observed have been reported for core-shell geometries.

• 出版日期2010-2