Fabrication of p-Type Silicon Nanowire Arrays with a High Aspect Ratio Using Electrochemical and Alkaline Etching

作者：Jang Hwan Soo; Choi Ho Jin; Kim Jae Hyun^*

来源：Journal of Nanoscience and Nanotechnology, 2012, 12(4): 3567-3570.

DOI：10.1166/jnn.2012.5591

• Electrochemical Etching
• KOH Etching
• Nanowire
• p-Type silicon

We report on the fabrication of silicon nanostructures with a high aspect ratio that were created using a combination of electrochemical etching and alkaline etching. With this technique, we were able to fabricate nano- and/or micro-wire structures that are perfectly periodic over large areas of 3.14 cm(2). After porous silicon was created by electrochemical etching, the effect of post-alkaline etching was investigated to determine how changes in the etching time, solution concentration and temperature of the etchant influenced the silicon morphology. As a result, periodic silicon wire arrays with good vertical alignment were obtained, and these arrays had a width of less than 500 nm and/or a high aspect ratio of more than 20.

• 出版日期2012-4