All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2 on SrTiO3 single crystal

作者：Tsuchiya Takashi^*; Terabe Kazuya; Aono Masakazu

来源：Applied Physics Letters, 2013, 103(7): 073110.

DOI：10.1063/1.4818736

An all-solid-state electric-double-layer transistor (EDLT) with a Gd-doped CeO2 (GDC) oxide ion conductor/SrTiO3 (STO) insulator structure has been developed. At 473 K, the drain current of the EDLT was well controlled, from less than nA order to mu A order, by electrostatic carrier doping at the GDC/STO interface due to oxide ion (O2-) migration in the GDC, in contrast to an inactiveness at room temperature. The EDL capacitance at the interface, measured with an ac impedance spectroscopy, was 14 mu F cm(-2), higher than that reported for a microporous-SiO2 EDLT and comparable to that of an ionic-liquid-gated EDLT.

• 出版日期2013-8-12