科研之友
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摘要
Macroporous silicon light trapping layers on the surface of p-type substrates were manufactured by using electrochemical etching in electrolyte containing organic solvent and under potentiostatic conditions. Equilibrium state where pore size and orientation slightly depend on the etching time was observed under potentiostatic etching conditions. Optical measurements have shown the decreased optical reflection as compared to bulk silicon. The p-n junction was formed by phosphorus diffusion from phosphosilicate glasses. Scanning Kelvin Force Microscopy technique was used to determine the location of p-n junction in samples with porous silicon layers.
- 出版日期2015
