科研之友
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摘要
The authors have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultrahigh vacuum deposition with a base pressure of 1 x 10(-9) Torr. The thickness of the film was varied from 65 to 100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.32 x 10(-5) Omega m at room temperature and show a semimetallic nature.
- 出版日期2015-11
