Avalanche Ruggedness of GaN p-i-n Diodes Grown on Sapphire Substrate

作者：Liu, Wenkai; Xu, Weizong^*; Zhou, Dong; Ren, Fangfang; Chen, Dunjun; Yu, Peng; Zhang, Rong; Zheng, Youdou; Lu, Hai^*

来源：Physica Status Solidi A-Applications and Materials Science, 2018, 215(18): 1800069.

DOI：10.1002/pssa.201800069

• avalanche ruggedness
• gallium nitride
• localized avalanche multiplication
• p-i-n diodes

Avalanche capability plays critical roles in safe operation of GaN-based high power devices and systems. In this study, GaN-based quasi-vertical p-i-n diodes on sapphire substrate with avalanche capability are fabricated, and for the first time, their avalanche ruggedness is investigated. Repeated avalanche breakdown tests suggest the representative features of avalanche-capability degradation, reduction in breakdown voltage, and rise in reverse leakage current. Further numerical simulations reveal the localization of avalanche breakdown, while subsequent pulsed current-voltage measurements identify that the thermal heating effect generated during localized avalanche multiplication is responsible for the device degradation in avalanche ruggedness.

• 出版日期2018-9-19
• 单位南京大学