摘要

New ion beam etcher (ME) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP ME exhibits higher etch rate than ICP.

  • 出版日期2015-12

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