Neon Ion Beam Lithography (NIBL)

作者：Winston Donald; Manfrinato Vitor R; Nicaise Samuel M; Cheong Lin Lee; Duan Huigao; Ferranti David; Marshman Jeff; McVey Shawn; Stern Lewis; Notte John; Berggren Karl K^*

来源：Nano Letters, 2011, 11(10): 4343-4347.

DOI：10.1021/nl202447n

• Ion beam lithography
• electron beam lithography
• hydrogen silsesquioxane
• helium ion microscope
• point spread function
• gas field ionization source

Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), similar to 1000x more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.

• 出版日期2011-10