High-Performance Split-Gate Enhanced UMOSFET With p-Pillar Structure

作者：Wang, Ying^*; Hu, Hai fan; Yu, Cheng hao; Lan, Hao

来源：IEEE Transactions on Electron Devices, 2013, 60(7): 2302-2307.

DOI：10.1109/TED.2013.2260547

• Breakdown voltage (BV)
• on-state specific resistance (RSP)
• split-gate
• trench gate UMOSFET

In this paper, a split-gate resurf stepped oxide (RSO) vertical UMOSFET with p-pillar under the p( ) plug region structure is proposed. The p-pillar could modulate the electric field of the drift region with the split-gate in 3-D and simultaneously brings electric field peaks at the sidewall junction between p-pillar and n-drift region. Thus the split-gate enhanced with p-pillar (SGEP) UMOS could increase the drift region doping concentration, reduce the on-state-specific resistance, and maintains the breakdown voltage as compared with the super junction and split-gate RSO UMOSs. Numerical simulation results show that the charge imbalance endurance of SGEP is also largely increased.

• 出版日期2013-7
• 单位哈尔滨工程大学