A High Isolation Series-Shunt RF MEMS Switch

作者：Yu Yuan Wei^*; Zhu Jian; Jia Shi Xing; Shi Yi

来源：Sensors (Switzerland), 2009, 9(6): 4455-4464.

DOI：10.3390/s90604455

• series-shunt
• RF MEMS switch
• metal-contact
• electrical model

This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 mu s. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm x 1.2 mm.

• 出版日期2009-6
• 单位南京大学