Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy

作者：Kanjanachuchai S^*; Tsuchiya Y; Usami K; Oda S

来源：Microelectronic Engineering, 2004, 73-4: 615-619.

DOI：10.1016/j.mee.2004.03.002

• Si nanocrystals
• speed-controlled tapping-mode AFM
• dot displacement

Silicon nanocrystals in the scale of 10 nm. have been grown using very-high-frequency chemical vapour deposition technique. While dot sizes could be well controlled, their distribution on silicon surface was found to be random. The as-grown nanocrystal Si dots do not adhere well to the substrate. It was found that non-contact probing of the surface using tapping-mode atomic force microscopy resulted in dot displacement. In speed-controlled experiments, dots can be relocated as far as 200 nm from their original locations. Furthermore, small surface structures can also be displaced.

• 出版日期2004-6