Modeling and Simulation of Junctionless Double Gate Radiation Sensitive FET (RADFET) Dosimeter

作者：Dubey Avashesh; Ajay; Narang Rakhi; Saxena Manoj; Gupta Mridula^*

来源：IEEE Transactions on Nanotechnology, 2018, 17(1): 49-55.

DOI：10.1109/TNANO.2017.2719286

• Junctionless
• double gate
• RADFET
• interface trap charge
• surface potential
• threshold voltage
• sensitivity

A junctionless double gate radiation sensitive FET (RADFET) has been proposed to improve the radiation sensitivity and its application as CMOS-based dosimeter is discussed. Analytical model has been developed from 2D Poisson equation using variable separation technique and electrical performance of the proposed architecture has been compared with the conventional double gate (DG) RADFET. The comparison of device characteristics shows that the JL DG RADFET exhibits better electrical performance and sensitivity as compare to conventional DG RADFET. The model is verified using ATLAS 3D device simulation software.

• 出版日期2018-1