Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing

作者：Shin Hae A Seul^*; Kim Byoung Joon; Kim Ju Heon; Hwang Sung Hwan; Budiman Arief Suriadi; Son Ho Young; Byun Kwang Yoo; Tamura Nobumichi; Kunz Martin; Kim Dong Ik; Joo Young Chang

来源：Journal of Electronic Materials, 2012, 41(4): 712-719.

DOI：10.1007/s11664-012-1943-7

• Through-silicon via (TSV)
• copper
• microstructure
• twin
• stress

The microstructural evolution of Cu through-silicon vias (TSVs) during thermal annealing was investigated by analyzing the Cu microstructure and the effects of twin boundaries and stress in the TSV. The Cu TSV had two regions with different grain sizes between the center and the edge with a random Cu texture before and after annealing. The grain size of large grains was almost unchanged after annealing, and the abrupt grain growth was restricted by the twin boundaries due to their structural stability. However, microvoids and cracks in the Cu TSV were observed after annealing. These defects were formed by the stress concentration among Cu grains. After defects were formed, the stress level of the TSV was decreased after annealing.

• 出版日期2012-4