A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications

作者：Shrivastava Mayank^*; Gossner Harald; Rao V Ramgopal

来源：IEEE Electron Device Letters, 2012, 33(10): 1432-1434.

DOI：10.1109/LED.2012.2206791

• Drain extended
• FinFET
• high voltage (HV)
• system-on-a-chip (SoC)

A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2x better R-ON versus V-BD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.

• 出版日期2012-10