Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

作者：Hu, Yue; Liu, Huazhen; Xu, Qianqian; Wang, Luwen; Wang, Jing; Chen, Shichang; Zhao, Peng; Wang, Ying; Wang, Gaofeng^*

来源：IEEE Journal of the Electron Devices Society, 2017, 5(3): 157-163.

DOI：10.1109/JEDS.2017.2690363

• LDMOS
• partial silicon-on-insulator (PSOI)
• breakdown voltage
• on-resistance

Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide-semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied. The maximum BV (BVmax) is examined under various settings of the device length L and the active silicon film thickness t. It is shown that there exists an optimal pair of (L, t) for PSOI at which the highest BV can be achieved. The ratio of L/t is better chosen between 5 and 7 for the device designs, in particular, L/t = 6 can be considered as the optimal one theoretically. Moreover, impacts of the silicon window length L-w and the drift doping concentration N-dr on the BV, the on-resistance (R-on) and the figure-of-merit (= BV2/R-on) are also carefully studied.

• 出版日期2017-5
• 单位杭州电子科技大学