AN ALTERNATIVE METHOD TO EXTRACT THE PARASITIC CAPACITANCES OF GaN FETs

作者：Loo Yau J R^*; Tapia Sanchez I; Moreno P

来源：Microwave and Optical Technology Letters, 2015, 57(1): 223-225.

DOI：10.1002/mop.28816

• GaN FET
• linear modeling
• parasitic capacitances

This work presents a method to determine the parasitic capacitances of GaN FETs, especially the C-pd. The proposed method is based on an idea used for GaAs FET that assumes that C-pd is directly proportional to C-ds by a factor of 0.25. The contribution of this work lies in the adaptation of this technique to be suitable for GaN FETs by proposing a methodology to accurately compute the proportionality factor. The proposed procedure is based on the ratio of Im(Y-11+Y-12) to Im(Y-22+Y-12), which is related to the asymmetry of the depletion region of the GaN FET under pinched-off Cold-FET condition. To validate the proposed method, several GaN FETs were modeled using the extracted capacitances and the simulations results have a high correlation with experimental data.

• 出版日期2015-1