A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN

作者：Aoyagi Y^*; Kurose N

来源：Applied Physics Letters, 2013, 102(4): 041114.

DOI：10.1063/1.4789977

A dynamically controlled micro-plasma-excited (MIPE) aluminum gallium nitride deep ultraviolet (DUV) light-emitting device is demonstrated. This device provides high-power DUV emission at any desired wavelength and allows enlargement of emission areas like plasma display panels for easy, low-cost fabrication. Neither p-n junctions nor electrode contacts are required for device fabrication. We fabricated 2-in. diameter wafer-size MIPE emitters of DUV light at specific wavelengths from AlGaN quantum wells with 50 mW average output power. We can also fabricate 6-in. diameter DUV emitters using sapphire wafers and 1m x 5m panel-type DUV emitters.

• 出版日期2013-1-28