A Dual-Gate Graphene FET Model for Circuit Simulation-SPICE Implementation

作者：Umoh Ime J^*; Kazmierski Tom J; Al Hashimi Bashir M

来源：IEEE Transactions on Nanotechnology, 2013, 12(3): 427-435.

DOI：10.1109/TNANO.2013.2253490

• Ambipolar and unipolar conduction
• graphene device model
• hole and electron conduction
• saturation displacement current
• SPICE implementation

This paper presents a SPICE compatible model of a dual-gate bilayer graphene field-effect transistor. The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed-form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3, and it shows a good agreement against experimental data with the normalized root-mean-square error less than 10%.

• 出版日期2013-5