A p-i-n junction diode based on locally doped carbon nanotube network

作者：Liu, Xiaodong; Chen, Changxin^*; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

来源：Scientific Reports, 2016, 6(1): 23319.

DOI：10.1038/srep23319

• FIELD-EFFECT TRANSISTORS
• FABRICATION

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p-and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (similar to 10(4)), large forward current (similar to 12.2 mu A) and low reverse saturated current (similar to 1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of similar to 6 mu m.

• 出版日期2016-3-21
• 单位上海交通大学