Molecular dynamics simulations of oxide memory resistors (memristors)

作者：Savel'ev S E^*; Alexandrov A S; Bratkovsky A M; Williams R Stanley

来源：Nanotechnology, 2011, 22(25): 254011.

DOI：10.1088/0957-4484/22/25/254011

Reversible bipolar nanoswitches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion. The simulations show that the 'localized conductive filaments' and 'uniform push/pull' models for memristive switching are actually two extremes of the one stochastic mechanism.

• 出版日期2011-6-24