Diamond growth by hollow cathode arc chemical vapor deposition at low pressure range of 0.02-2 mbar

作者：Zhang GF; Buck V^*

来源：Diamond and Related Materials, 1999, 8(12): 2148-2151.

DOI：10.1016/S0925-9635(99)00179-X

• diamond films
• hollow cathode arc
• low pressure

An attempt was made to synthesize diamond films on (001) silicon substrates by means of a graphite or tungsten hollow cathode are chemical vapor deposition at a lower pressure range of 0.02-2 mbar. The hollow cathode are provides the advantage of the generation of a large area, high-flux electron beam, a very high-density plasma, and the high kinetic reaction species due to relatively low pressure operation. Diamond films have been characterized by scanning electron microscopy and Raman spectroscopy. The quality of diamond films deposited using the graphite hollow cathode was better than that using the tungsten hollow cathode at 2 mbar pressure. With further decreasing the deposition pressure, the evaporation and sputtering of the graphite hollow cathode are increased and the film quality was deteriorated. The growth rate of diamond films decreased and the nucleation density increased with decreasing deposition pressure.

• 出版日期1999-12