Microstructural, optical, and magnetic properties of (Zn1-xMnx)O thin films grown on (0001)Al2O3 substrates

作者：Lee SJ; Lee HS; Kim DY^*; Kim TW

来源：Journal of Crystal Growth, 2005, 276(1-2): 121-127.

DOI：10.1016/j.jcrysgro.2004.11.300

• (Zn1-xMnx)O thin film
• sputtering
• diluted magnetic semiconductor

The microstructural, optical, and magnetic properties of (Zn1-xMnx)O thin films grown on (0001) Al2O3 substrates by using a radio-frequency magnetron sputtering were investigated. X-ray diffraction, atomic force microscopy, and scanning electron microscopy measurements showed that the microstructural properties of the (Zn1-xMnx)O thin films were improved by increasing the thickness of the (Zn1-xMnx)O buffer layer, which might originate from the suppression of the columnar-growth mode at the initial growth stage because the (Zn1-xMnx)O buffer layer grown at a lower temperature had a relaxed c-axis preference. The photoluminescence peak at 419nm from the (Zn0.91Mn0.09)O thin films could be attributed to the activation of Mn2+ ions substituting for Zn2+ ions, indicative of the existence of a diluted magnetic semiconductors. The magnetization curve as a function of the magnetic field at 15 K indicated that ferromagnetism existed in the (Zn0.91Mn0.09)O thin films, and the magnetization curve as a function of the temperature showed that the T-c value of the (Zn-0.91 Mn-0.09)O thin films was 110 K. These results can help improve understanding of the effects of the microstructural properties on the magnetic properties of (Zn1-xMnx)O thin films grown on (0001) Al2O3 substrates.

• 出版日期2005-3-15