Nanocrystalline silicon films prepared by laser-induced crystallization

作者：Fu GS^*; Yu W; Li SQ; Hou HH; Peng YC; Han L

来源：Chinese Physics, 2003, 12(1): 75-78.

• laser annealing
• crystallization
• nanocrystalline silicon

The excimer laser-induced crystallization technique has been used to investigate the preparation of nanocrystalline silicon (nc-Si) from amorphous silicon (alpha-Si) thin films on silicon or glass substrates. The a-Si films without hydrogen grown by pulsed-laser deposition are chosen as precursor to avoid the problem of hydrogen effluence during annealing. Analyses have been performed by scanning electron microscopy, atomic force microscopy, Raman scattering spectroscopy and high-resolution transmission-electron microscopy. Experimental results show that silicon nanocrystals can be formed through laser annealing. The growth characters of nc-Si are strongly dependent on the laser energy density. It is shown that the volume of the molten silicon predominates essentially the grain size of nc-Si, and the surface tension of the crystallized silicon is responsible for the mechanism of nc-Si growth.

• 出版日期2003-1
• 单位河北大学