A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current

作者：Park Jae Hyo^*; Seok Ki Hwan; Kim Hyung Yoon; Chae Hee Jae; Lee Sol Kyu; Joo Seung Ki

来源：IEEE Electron Device Letters, 2015, 36(4): 351-353.

DOI：10.1109/LED.2015.2405348

• Lightly-doped drain (LDD)
• poly-Si thin-film transistor (TFT)
• gate-induced drain leakage
• kink effect

An ultrathin channel of poly-Si thin-film transistors with a quasi-lightly doped drain (Q-LDD) structure, which reduces the kink current considerably, have been proposed and fabricated. The doping concentration on the poly-Si channel was adjusted by the different thickness between source-drain and LDD region. The proposed Q-LDD shows advantages of using a thin channel and a thin-gate insulator, comparing with the conventional fabrication process of LDD using a thick oxide side walls. The gate-induced drain leakage currents were successfully suppressed without sacrifice of the ON-current and threshold voltage. Moreover, the kink effect also reduced.

• 出版日期2015-4