An asymmetric naphthalimide derivative for n-channel organic field-effect transistors

作者：Wang, Zongrui; Zhao, Jianfeng; Dong, Huanli^*; Qiu, Ge; Zhang, Qichun; Hu, Wenping

来源：Physical Chemistry Chemical Physics, 2015, 17(40): 26519-26524.

DOI：10.1039/c5cp01302j

• HIGH-ELECTRON-MOBILITY
• THIN-FILM MORPHOLOGY
• HIGH-PERFORMANCE
• PHYSICAL-PROPERTIES
• SEMICONDUCTORS
• POLYMER
• MOLECULES
• TRANSPORT
• THIENOACENE
• BEHAVIOR

A new naphthalene diimide (NDI) derivative with an asymmetric aromatic backbone of 2-tetradecylbenzo[lmn]benzo[4,5]imidazo[2,1-b][3,8] phenanthroline-1,3,6(2H)-trione (IZ0) was designed and synthesized. Low LUMO level, large energy gap, and high thermal stability are characterized for this IZ0 compound. The OFET devices based on an IZ0 semiconductor exhibit typical n-type behavior. Through continuously optimizing the fabrication conditions, high performance n-channel OFETs were fabricated based on IZ0 films and single crystals, with the highest carrier mobility of 0.072 cm(2) V-1 s(-1) and 0.22 cm(2) V-1 s(-1), respectively.

• 出版日期2015
• 单位中国科学院; 中国科学院大学; 南阳理工学院; 首都师范大学