摘要

The paper compares structural, optical and electrical properties of ZnS thin films prepared by thermal evaporation and SILAR techniques. Both techniques produced well-adherent films with uniform substrate coverage. Films were found to be polycrystalline in both the cases. Crystallite size of the films was found to improve with thickness. Thermal evaporated films were found to possess comparatively better electrical properties owing to their superior crystallanity. However optical absorption characteristics of both the films were found to be similar. Detailed structural, optical and electrical studies reveal that the SILAR technique can be an effective and economical alternative to thermal evaporation for optoelectronic applications.

  • 出版日期2017-9