Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks

作者：Tsoutsou D; Lamagna L^*; Volkos S N; Molle A; Baldovino S; Schamm S; Coulon P E; Fanciulli M

来源：Applied Physics Letters, 2009, 94(5): 053504.

DOI：10.1063/1.3075609

• annealing
• atomic layer deposition
• electron energy loss spectra
• elemental semiconductors
• high-k dielectric thin films
• lanthanum compounds
• leakage currents
• permittivity
• silicon
• transmission electron microscopy
• X-ray diffraction
• X-ray photoelectron spectra

Thin LaxZr1-xO2-delta (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 degrees C using ((PrCp)-Pr-i)(3)La, (MeCp)(2)ZrMe(OMe) and O-3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 degrees C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.

• 出版日期2009-2-2