A Study of Simulation of Three-Dimensional Quasi-Steady Molecular Statics Nanoscale Orthogonal Cutting of Single-Crystal Silicon Material Having Rows of Atoms with Vacancy Defect

作者：Lin Zone Ching^*; Jian Chen Syue; Wang Ren Yuan

来源：Journal of the Chinese Society of Mechanical Engineers, 2014, 35(4): 257-264.

• quasi-steady molecular statics
• nanoscale orthogonal cutting
• vacancy defect

Employing quasi-steady molecular statics method to carry out simulation of nanoscale orthogonal cutting of single-crystal silicon having rows of atom with vacancy defect, the paper analyzes the simulation results of its cutting force, chip shape, equivalent stress and equivalent strain. During crystal growth period, single-crystal silicon still has many point defects caused inside. The agglomeration and diffusion caused by thermal energy effect may form micro defects. Due to different ways and different shapes of agglomeration, these point defects are given different names. Therefore, this paper supposes that a single-crystal silicon material contains a row of several defected atoms with vacancy and two rows of defected atoms with vacancy. A single-crystal diamond cutting tool is used to carry out simulated orthogonal cutting of single-crystal silicon workpiece. After that, the paper compares this simulated cutting result with the orthogonal cutting result of defect-free single-crystal silicon workpiece. Due to the single-crystal silicon workpiece with vacancy defect, the paper proposes a correction method of the workpiece atom coding in the main cutting program for the defected single-crystal silicon workpiece. It not only can simulate the workpiece with defect-free lattice, but also can perform simulated orthogonal cutting of the workpiece with defects produced inside.

• 出版日期2014-8