Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte

作者：Gao, Qingxue; Xiao, Hongdi^*; Cao, Dezhong; Yang, Xiaokun; Liu, Jiandiang; Mao, Hongzhi; Ma, Jin

来源：Journal of Alloys and Compounds, 2017, 722: 767-771.

DOI：10.1016/j.jallcom.2017.06.158

• Self-standing GaN-based thin films
• Electrochemical etching
• InGaN/GaN MQWs
• Neutral electrolyte

We found an electrochemical method which can be used to rapidly fabricate GaN-based thin film with phase-separated InGaN/GaN multiple quantum well (MQW) via an electrochemical etching technique. Compared with the as-grown sample, light extraction efficiency is significantly improved for the etched samples due to the increased light-extracting surface area and improved internal quantum efficiency which is due to the relaxation of strain in the MQWs embedded in the nanoporous n-GaN layers. The several growth stages of nanoporous GaN were examined by microscopic technique, indicating the variation from dislocation defects in the GaN/porous GaN interface to oxidation of GaN, and finally to formation of GaNO3 which is soluble in water.

• 出版日期2017-10-25
• 单位山东大学