Degradation pattern of black phosphorus multilayer field-effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

作者：Lee Byung Chul; Kim Chul Min; Jang Ho Kyun; Lee Jae Woo; Joo Min Kyu; Kim Gyu Tae

来源：Applied Surface Science, 2017, 419: 637-641.

DOI：10.1016/j.apsusc.2017.04.126

• Black phosphorus
• Degradation pattern
• Carrier mobility
• Threshold voltage
• Contact resistance

Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O-2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field-effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (V-TH), carrier mobility (mu), contact resistance (R-CT) and channel resistance (R-CH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that R-CT reduces and then, increases with time; whereas, the behavior of R-CH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively.

• 出版日期2017-10-15