4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0)

作者：Horita Masahiro^*; Noborio Masato; Kimoto Tsunenobu; Suda Jun

来源：IEEE Electron Device Letters, 2014, 35(3): 339-341.

DOI：10.1109/LED.2014.2299557

• Aluminum nitride (AlN)
• epitaxial growth
• isopolytype
• MISFETs
• silicon carbide (SiC)

4H silicon carbide (4H-SiC) metal-insulator-semiconductor field-effect transistors (MISFETs) with 4H aluminum nitride (4H-AlN) gate insulators have been demonstrated. The 4H-AlN layers are isopolytypically grown on 4H-SiC (11 (2) over bar0) by molecular-beam epitaxy. Gate controlled transistor operation was realized using the AlN/SiC MISFETs. The MISFETs exhibit a low gate leakage current (<10(-10) A) and normally ON characteristics with a threshold voltage of approximately -10 V and a field-effect mobility of 0.5 cm(2)V(-1)s(-1). Capacitance-voltage measurements of AlN/SiC MIS capacitors reveal a large negative flat band shift of -10.9 V, which is consistent with the normally ON characteristics.

• 出版日期2014-3