摘要
A novel extrinsic resistance extraction method of MOSFET at V-gs=V-ds=0V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8x0.6x12 mu m gatewidth (number of gate fingerxunit gate widthxcells) are compared, and good agreement has been obtained up to 50GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.