Non-local electrical spin injection and detection in germanium at room temperature

作者：Rortais F^*; Vergnaud C; Marty A; Vila L; Attane J P; Widiez J; Zucchetti C; Bottegoni F; Jaffres H; George J M; Jamet M

来源：Applied Physics Letters, 2017, 111(18): 182401.

DOI：10.1063/1.5003244

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches approximate to 15 m Omega at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 mu m, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature. Published by AIP Publishing.

• 出版日期2017-10-30
• 单位中国地震局