A 0.2-2.6 GHz Wideband Noise-Reduction Gm-Boosted LNA

作者:Lee Hua Chin*; Wang Chao Shiun; Wang Chorng Kuang
来源:IEEE Microwave and Wireless Components Letters, 2012, 22(5): 269-271.
DOI:10.1109/LMWC.2012.2191275

摘要

This letter presents a wideband low-noise amplifier (LNA) which utilizes g(m)-boosted and noise-reduction techniques. The proposed DC-coupled 2-stage LNA employs an error amplifier to cancel the DC-offset voltage between the differential DC-coupled paths. The LNA is implemented in 90-nm digital CMOS technology. Within 0.2-2.6 GHz wideband applications, the LNA achieves 24 dB voltage gain, 1.9-2.9 dB NF, -3 dBm IIP3. The core power of the LNA draws 9 mA from 1 V supply voltage and occupies 0.046 mm(2).