A THz-range planar NDR device utilizing ballistic electron acceleration in GaN

作者：Aslan Barbaros^*; Eastman Lester F

来源：Solid-State Electronics, 2011, 64(1): 57-62.

• GaN diode
• Terahertz
• Negative differential resistance
• Negative differential conductance
• Accumulation mode
• Ballistic transport
• Device simulation

A planar and ultra-short gallium nitride (GaN) diode structure is investigated as a potential Terahertz (THz) range negative differential resistance (NDR) diode. An empirical velocity-field relation, exhibiting a peak electron velocity as high as 7 x 10(7) cm/s, is employed to characterize the high-field transport in the simulations, accounting for ballistic electron acceleration and velocity reduction due to phonon build up. The resulting device operation is in accumulation-layer transit-time mode and large-signal circuit simulation results are reported along with discussions. Conversion efficiencies up to similar to 3.4% at similar to 1.5 THz are shown to be possible.

• 出版日期2011-10