Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C(fp)

作者：Wembe Tafo Evariste; Su Hong^*; Gao Yanni; Wu Ming

来源：Nuclear Science and Techniques, 2008, 19(4): 241-245.

DOI：10.1016/S1001-8042(08)60057-3

• Charge sensitive preamplifier
• CMOS transistor
• Feedback capacitor
• Simulation

In this paper, to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors, the CMOS FET is implemented as a feedback capacitor C(fp), so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit, the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns, the output resistance less than 94 Omega and the linearity almost good.

• 出版日期2008-8-20
• 单位中国科学院近代物理研究所