A CMOS digital step X-type attenuator with low process variations

作者：Wan, Jiayue; Chen, Zhiming; Wang, Xinghua^*

来源：IEICE Electronics Express, 2017, 14(17): 20170761.

DOI：10.1587/elex.14.20170761

• attenuator
• CMOS
• low effect of process variation

In this paper, a digital step X-type attenuator with low process variations is demonstrated using 90 nm CMOS technology. The X-type attenuator uses MOSFETs as voltage controlled resistors, which influenced by process parameters. And a compensation circuit associated with the threshold voltage is employed to mitigate the process influence. The attenuator have a maximum attenuation range of 32 dB with 0.5 dB steps. The rms amplitude error and rms phase error are 0.42 dB and 3.1 degrees over 23.5-30 GHz respectively, and the insertion losse is 9.77 dB at 25 GHz. The core chip size is 0.48 mm(2).

• 出版日期2017-9-10
• 单位北京理工大学