AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability

作者：Liou JJ^*; Huang CI

来源：Microelectronics Journal, 2001, 32(5-6): 419-431.

DOI：10.1016/S0026-2692(01)00012-X

• heterojunction bipolar transistor
• thermal effect
• semiconductor

AlGaAs/GaAs heterojunction bipolar transistor (HBT) has the advantages of superior switching speed, wide linearity, and high current handling capability. As a result, the device has gained popularity in designing power amplifiers for RF and microwave applications. However, the high power in the HBT, together with the poor thermal conductivity of GaAs, gives rise to significant thermal effect and reduced reliability in such a device. This paper presents an overview on the simulation, modeling, and reliability of AlGaAs/GaAs HBTs. Emphasis will be placed on the effects of thermal-electrical interacting behavior on the de and ac performance of the HBT. The thermal-induced degradation process in the HBT will also be addressed and analyzed.

• 出版日期2001-6