科研之友
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摘要
This special issue looks at the potential applications of GaN-based crystals in both fields of nano-electronics and optoelectronics. The contents will focus on the fabrication and characterization of GaN-based thin films and nanostructures. It consists of six papers, indicating the current developments in GaN-related technology for high-efficiency sustainable electronic and optoelectronic devices, which include the role of the AIN layer in high-quality AlGaN/GaN heterostructures for advanced high-mobility electronic applications and simulation of GaN-based nanorod high-efficiency light-emitting diodes for optoelectronic applications. From the results, one can learn the information and experience available in the advanced fabrication of nanostructured GaN-based crystals for nano-electronic and optoelectronic devices.
- 出版日期2018-3
- 单位中山大学
