Atomistic Simulation of Voids Effect on Nanoindentation

作者:Shan, D. B.*; Yuan, L.; Xu, Z. H.; Guo, B.
来源:Journal of Nanoscience and Nanotechnology, 2009, 9(2): 1234-1236.
DOI:10.1166/jnn.2009.C127

摘要

In this paper, spherical voids effect on the first dislocation emission of single-crystal Cu in nanoindentation is investigated by means of the atomistic simulation. The results show that there are two opposite effects on dislocation emission resulting from the stable voids in matrix. The existence of voids can lower or heighten the load needed to nucleate the first dislocation. The relative distance between the void and the indenter, and the void size play an important role in the yield load of the first dislocation emission in nanoindentation.