Design of a nanoswitch in 130 nm CMOS technology for 2.4 GHz wireless terminals

作者：Bhuiyan M Arif Sobhan^*; Reaz M Bin Ibne; Jalil J; Rahman L Farzana

来源：Bulletin of the Polish Academy of Sciences-Technical Sciences, 2014, 62(2): 399-406.

DOI：10.2478/bpasts-2014-0041

• CMOS
• ISM band
• nanometer
• transceiver
• T/R switch
• wireless

This paper proposes a transmit/receive (T/R) nanoswitch in 130 nm CMOS technology for 2.4 GHz ISM band transceivers. It exhibits 1.03-dB insertion loss, 27.57-dB isolation and a power handling capacity (P-1dB) of 36.2-dBm. It dissipates only 6.87 mu W power for 1.8/0 V control voltages and is capable of switching in 416.61 ps. Besides insertion loss and isolation of the nanoswitch is found to vary by 0.1 dB and 0.9 dB, respectively for a temperature change of 125 degrees C. Only the transistor W/L optimization and resistive body floating technique is used for such lucrative performances. Besides absence of bulky inductors and capacitors in the schematic circuit help to attain the smallest chip area of 0.0071 mm(2) which is the lowest ever reported in this frequency band. Therefore, simplicity and low chip area of the circuit trim down the cost of fabrication without compromising the performance issue.

• 出版日期2014-6