n-Type Reduced Graphene Oxide Field-Effect Transistors (FETs) from Photoactive Metal Oxides

作者：Yoo Heejoun; Kim Youngmin; Lee Junghyun; Lee Hyemi; Yoon Yeoheung; Kim Giyoun; Lee Hyoyoung

来源：Chemistry - A European Journal, 2012, 18(16): 4923-4929.

DOI：10.1002/chem.201103967

• field effect transistors
• graphene
• photocatalysts
• semiconductors
• titanium dioxide
• zinc oxide

Graphene is of considerable interest as a next-generation semiconductor material to serve as a possible substitute for silicon. For real device applications with complete circuits, effective n-type graphene field effect transistors (FETs) capable of operating even under atmospheric conditions are necessary. In this study, we investigated n-type reduced graphene oxide (rGO) FETs of photoactive metal oxides, such as TiO2 and ZnO. These metal oxide doped FETs showed slight n-type electric properties without irradiation. Under UV light these photoactive materials readily generated electrons and holes, and the generated electrons easily transferred to graphene channels. As a result, the graphene FET showed strong n-type electric behavior and its drain current was increased. These n-doping effects showed saturation curves and slowly returned back to their original state in darkness. Finally, the n-type rGO FET was also highly stable in air due to the use of highly resistant metal oxides and robust graphene as a channel.

• 出版日期2012-4