Scattering effects of phonons in two polymorphic structures of gallium nitride

作者:Kang Nam Lyong*; Choi Sang Don
来源:Journal of Applied Physics, 2009, 106(6): 063717.
DOI:10.1063/1.3226885

摘要

Effects of piezoelectric and longitudinal optical (LO) phonon scatterings on transport of electrons confined in quasi-two-dimensional square wells of wurtzite and zinc-blende structures are compared by using a theory of absorption power derived in the linear response scheme. We find for GaN that the absorption power for both wurtzite and zinc-blende structures is keenly affected by the screening in such a way that the power increases, but the half width decreases as the electron density increases, and the piezoelectric phonon scattering is affected by the screening more than the optical phonon scattering. We also find that the piezoelectric phonon scattering (LO phonon scattering) is dominant at high (low) density and low (high) temperature in the wurtzite structure, whereas the tendency is reverse for the zinc-blende structure.

  • 出版日期2009-9-15