Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer

作者：Asakura Yusuke; Higashi Tomohiro; Nishiyama Hiroshi; Kobayashi Hiroyuki; Nakabayashi Mamiko; Shibata Naoya; Minegishi Tsutomu; Hisatomi Takashi; Katayama Masao; Yamadaa Taro; Domen Kazunari

来源：Sustainable Energy and Fuels, 2018, 2(1): 73-78.

DOI：10.1039/c7se00402h

Particulate Ta3N5, a material that responds to visible light for photo-electrochemical O-2 evolution, was glued to ametallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta3N5 to the back-contact metal layer and prevented hole-electron recombination.

• 出版日期2018-1