Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers

作者：Lee K H; Chang P C; Chang S J; Su Y K; Wang Y C; Yu C L; Kuo C H

来源：Thin Solid Films, 2010, 518(10): 2839-2842.

DOI：10.1016/j.tsf.2009.08.051

• Nitrides
• Schottky diodes
• MgxNy/GaN
• Nucleation layers
• Atomic Force Microscopy
• Secondary-Ion Mass Spectroscopy
• X-ray diffraction
• Electrical properties and measurements

We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple MgxNy/GaN nucleation layers. With multiple MgxNy/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple MgxNy/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (phi(B)) increased from 1.07 to 1.15 eV with the insertion of the multiple MgxNy/GaN nucleation layers.

• 出版日期2010-3-1
• 单位中央民族大学